savantic semiconductor product specification silicon npn power transistors 2SD1236L description with t o-220c package complement to type 2sb920l low collector saturation voltage large current capacity. applications relay drivers,high speed inverters, converters,and other general high-current switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 90 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a i cm collector current-peak 9 a t c =25 30 p c collector dissipation 1.75 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD1236L characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;r be = ; 80 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 90 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 0.4 v i cbo collector cut-off current v cb =80v; i e =0 100 a i ebo emitter cut-off current v eb =4v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =2v 70 280 h fe-2 dc current gain i c =3a ; v ce =2v 30 f t transition frequency i c =1a ; v ce =5v 20 mhz switching times t on turn-on time 0.1 s t s storage time 1.2 s t f fall time i c =10i b1 =-10i b2 =2a v cc =50v,r l =25 c 0.4 s h fe-1 classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon npn power transistors 2SD1236L package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SD1236L
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